LGE c945 to-92 free download

File name c945_to-92.pdf

C945(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity Low noise Complementary to A733 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V 5 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=100uA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100mA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICEO VCE=45V 0.1 uA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 uA hFE(1) VCE=6 V , IC=1mA 70 700 DC current gain hFE(2) VCE=6 V , IC=0.1mA 40 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V Transition frequency fT VCE=6V,IC=10mA,f =30 MHz 200 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 3.0 pF VCE=6V,IC=0.1mA Noise figure NF 10 dB RG=10k,f=1kMHZ CLASSIFICATION OF